19 March 2015 Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time, and cost at litho
Author Affiliations +
Abstract
High-end semiconductor lithography requirements for CD, focus and overlay control drive the need for diffraction-based metrology1,2,3,4 and integrated metrology5. In the advanced nodes, more complex lithography techniques (such as multiple patterning), use of multi-layer overlay measurements in process control, advanced device designs (such as advanced FinFET), as well as advanced materials (like hardmasks) are introduced. These pose new challenges for lithometro cycle time, cost, process control and metrology accuracy. In this publication a holistic approach is taken to face these challenges via a novel target design, a brand new implementation of multi-layer overlay measurement capability in diffraction-based mode and integrated metrology.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaustuve Bhattacharyya, Arie den Boef, Martin Jak, Gary Zhang, Martijn Maassen, Robin Tijssen, Omer Adam, Andreas Fuchs, Youping Zhang, Jacky Huang, Vincent Couraudon, Wilson Tzeng, Eason Su, Cathy Wang, Jim Kavanagh, Christophe Fouquet, "Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time, and cost at litho", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241E (19 March 2015); doi: 10.1117/12.2085678; https://doi.org/10.1117/12.2085678
PROCEEDINGS
8 PAGES


SHARE
Back to Top