19 March 2015 Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time, and cost at litho
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Abstract
High-end semiconductor lithography requirements for CD, focus and overlay control drive the need for diffraction-based metrology1,2,3,4 and integrated metrology5. In the advanced nodes, more complex lithography techniques (such as multiple patterning), use of multi-layer overlay measurements in process control, advanced device designs (such as advanced FinFET), as well as advanced materials (like hardmasks) are introduced. These pose new challenges for lithometro cycle time, cost, process control and metrology accuracy. In this publication a holistic approach is taken to face these challenges via a novel target design, a brand new implementation of multi-layer overlay measurement capability in diffraction-based mode and integrated metrology.
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Kaustuve Bhattacharyya, Kaustuve Bhattacharyya, Arie den Boef, Arie den Boef, Martin Jak, Martin Jak, Gary Zhang, Gary Zhang, Martijn Maassen, Martijn Maassen, Robin Tijssen, Robin Tijssen, Omer Adam, Omer Adam, Andreas Fuchs, Andreas Fuchs, Youping Zhang, Youping Zhang, Jacky Huang, Jacky Huang, Vincent Couraudon, Vincent Couraudon, Wilson Tzeng, Wilson Tzeng, Eason Su, Eason Su, Cathy Wang, Cathy Wang, Jim Kavanagh, Jim Kavanagh, Christophe Fouquet, Christophe Fouquet, } "Holistic approach using accuracy of diffraction-based integrated metrology to improve on-product performance, reduce cycle time, and cost at litho", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241E (19 March 2015); doi: 10.1117/12.2085678; https://doi.org/10.1117/12.2085678
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