Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing

P. Y. Hung; Thomas E. O'Loughlin; Aaron Lewis; Rimma Dechter; Martin Samayoa; Sarbajit Banerjee; Erin L. Wood; Angela R. Hight Walker

doi:10.1117/12.2175623

19 March 2015 Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing

P. Y. Hung, Thomas E. O'Loughlin, Aaron Lewis, Rimma Dechter, Martin Samayoa, Sarbajit Banerjee, Erin L. Wood, Angela R. Hight Walker

Author Affiliations +

Proceedings Volume 9424, Metrology, Inspection, and Process Control for Microlithography XXIX; 94241S (2015) https://doi.org/10.1117/12.2175623
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Tip-enhanced Raman spectroscopy (TERS), with nanometer spatial resolution, has the capability to monitor chemical composition, strain, and activated dopants and is a promising metrology tool to aid the semiconductor R&D processes. This paper addresses the major challenges which limit the application of TERS from routine measurement: the lack of comparability, reproducibility, calibration, and standardization. To address these issues, we have developed a robust test structure and the ability to generate high-quality tips using a high volume manufacturing (HVM) approach. The qualifying data will be presented.

Citation Download Citation

P. Y. Hung, Thomas E. O'Loughlin, Aaron Lewis, Rimma Dechter, Martin Samayoa, Sarbajit Banerjee, Erin L. Wood, and Angela R. Hight Walker "Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241S (19 March 2015); https://doi.org/10.1117/12.2175623

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