19 March 2015 Study on ADI CD bias correlating ABC function
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As the technology node of semiconductor industry is being driven into more advanced 28 nm and beyond, the critical dimension (CD) error budget at after-development inspection (ADI) stage and its control are more and more important and difficult (1-4). 1 nm or even 0.5 nm CD difference is critical for process control. 0.5~1 nm drift of poly linewidth will result in a detectable off-target drift of device performance. The 0.5~1 nm CD drift of hole or metal linewidth on the backend interconnecting layers can potentially contribute to the bridging of metal patterns to vias, and thereby impact yield. In this paper, we studied one function in the scanning electron microscope (SEM) measurement, i.e. the adjustment of brightness and contrast (ABC). We revealed how the step of addressing focus and even the choice of addressing pattern may bring in a systematic error into the CD measurement. This provides a unique insight in the CD measurement and the measurement consistency of through-pitch (TP) patterns and functional patterns.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guogui Deng, Jingan Hao, Bin Xing, Yuntao Jiang, Gaorong Li, Qiang Zhang, Liwan Yue, Yanlei Zu, Huayong Hu, Chang Liu, Manhua Shen, Shijian Zhang, Weiming He, Nannan Zhang, Yi-Shih Lin, Qiang Wu, Xuelong Shi, "Study on ADI CD bias correlating ABC function", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242I (19 March 2015); doi: 10.1117/12.2086093; https://doi.org/10.1117/12.2086093


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