19 March 2015 Study on ADI CD bias correlating ABC function
Author Affiliations +
Abstract
As the technology node of semiconductor industry is being driven into more advanced 28 nm and beyond, the critical dimension (CD) error budget at after-development inspection (ADI) stage and its control are more and more important and difficult (1-4). 1 nm or even 0.5 nm CD difference is critical for process control. 0.5~1 nm drift of poly linewidth will result in a detectable off-target drift of device performance. The 0.5~1 nm CD drift of hole or metal linewidth on the backend interconnecting layers can potentially contribute to the bridging of metal patterns to vias, and thereby impact yield. In this paper, we studied one function in the scanning electron microscope (SEM) measurement, i.e. the adjustment of brightness and contrast (ABC). We revealed how the step of addressing focus and even the choice of addressing pattern may bring in a systematic error into the CD measurement. This provides a unique insight in the CD measurement and the measurement consistency of through-pitch (TP) patterns and functional patterns.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guogui Deng, Jingan Hao, Bin Xing, Yuntao Jiang, Gaorong Li, Qiang Zhang, Liwan Yue, Yanlei Zu, Huayong Hu, Chang Liu, Manhua Shen, Shijian Zhang, Weiming He, Nannan Zhang, Yi-Shih Lin, Qiang Wu, Xuelong Shi, "Study on ADI CD bias correlating ABC function", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242I (19 March 2015); doi: 10.1117/12.2086093; https://doi.org/10.1117/12.2086093
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

LithoCell-integrated critical dimension metrology
Proceedings of SPIE (July 15 2003)
Monitoring strategy to match the advanced fabs
Proceedings of SPIE (June 02 2004)
A study of the limited area scanning system in the...
Proceedings of SPIE (October 17 2008)
CD inspection by Nuflare NPI 6000 tool
Proceedings of SPIE (September 24 2010)

Back to Top