19 March 2015 Study on ADI CD bias correlating ABC function
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As the technology node of semiconductor industry is being driven into more advanced 28 nm and beyond, the critical dimension (CD) error budget at after-development inspection (ADI) stage and its control are more and more important and difficult (1-4). 1 nm or even 0.5 nm CD difference is critical for process control. 0.5~1 nm drift of poly linewidth will result in a detectable off-target drift of device performance. The 0.5~1 nm CD drift of hole or metal linewidth on the backend interconnecting layers can potentially contribute to the bridging of metal patterns to vias, and thereby impact yield. In this paper, we studied one function in the scanning electron microscope (SEM) measurement, i.e. the adjustment of brightness and contrast (ABC). We revealed how the step of addressing focus and even the choice of addressing pattern may bring in a systematic error into the CD measurement. This provides a unique insight in the CD measurement and the measurement consistency of through-pitch (TP) patterns and functional patterns.
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Guogui Deng, Guogui Deng, Jingan Hao, Jingan Hao, Bin Xing, Bin Xing, Yuntao Jiang, Yuntao Jiang, Gaorong Li, Gaorong Li, Qiang Zhang, Qiang Zhang, Liwan Yue, Liwan Yue, Yanlei Zu, Yanlei Zu, Huayong Hu, Huayong Hu, Chang Liu, Chang Liu, Manhua Shen, Manhua Shen, Shijian Zhang, Shijian Zhang, Weiming He, Weiming He, Nannan Zhang, Nannan Zhang, Yi-Shih Lin, Yi-Shih Lin, Qiang Wu, Qiang Wu, Xuelong Shi, Xuelong Shi, "Study on ADI CD bias correlating ABC function", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94242I (19 March 2015); doi: 10.1117/12.2086093; https://doi.org/10.1117/12.2086093


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