Coater/developer process integration of metal-oxide based photoresist

Benjamin L. Clark; Michael Kocsis; Michael Greer; Andrew Grenville; Takashi Saito; Lior Huli; Richard Farrell; David Hetzer; Shan Hu; Hiroie Matsumoto; Andrew Metz; Shinchiro Kawakami; Koichi Matsunaga; Masashi Enomoto; Jeffrey Lauerhaas; Anthony Ratkovich; David DeKraker

doi:10.1117/12.2085982

20 March 2015 Coater/developer process integration of metal-oxide based photoresist

Benjamin L. Clark, Michael Kocsis, Michael Greer, Andrew Grenville, Takashi Saito, Lior Huli, Richard Farrell, David Hetzer, Shan Hu, Hiroie Matsumoto, Andrew Metz, Shinchiro Kawakami, Koichi Matsunaga, Masashi Enomoto, Jeffrey Lauerhaas, Anthony Ratkovich, David DeKraker

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94251A (2015) https://doi.org/10.1117/12.2085982
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Inpria is pioneering a novel approach to EUV photoresist. Directly patternable metal oxide thin films have shown resolution better than 10nm half-pitch, with robust etch resistance, and efficient use of photons through high EUV absorbance. Inpria’s Gen2 photoresists are cast from commonly used organic coating solvents and are developed in typical negative tone develop (NTD) organic solvents. This renders them compatible with CLEAN TRACK LITHIUS Pro-EUV coater/developer system (Tokyo Electron Limited; TEL) and solvent drains. The presence of metal in the photoresist demands additional scrutiny and process development to minimize contamination risks to other tools and wafers. In this paper, we review progress in developing coat processes that reduce metal contamination levels below typical industry levels. We demonstrate minimization of trace metals contamination from wafer-to-coater/developer, and wafer-to-wafer from the spin coat process. This will also include results from surface analyses of frontside edge exclusion and backside of wafer using best-known analytical methods. In addition, we discuss results of coat uniformity and defectivity optimization. Wet clean compatibility and dry etch rate by using conventional Si-ARC/OPL etching recipe will also be presented. In conjunction with this work, we identify potential contamination pathways and means for managing contamination risk. We furthermore review equipment compatibility issues for using Inpria’s metal oxide photoresists.

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Benjamin L. Clark, Michael Kocsis, Michael Greer, Andrew Grenville, Takashi Saito, Lior Huli, Richard Farrell, David Hetzer, Shan Hu, Hiroie Matsumoto, Andrew Metz, Shinchiro Kawakami, Koichi Matsunaga, Masashi Enomoto, Jeffrey Lauerhaas, Anthony Ratkovich, and David DeKraker "Coater/developer process integration of metal-oxide based photoresist", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251A (20 March 2015); https://doi.org/10.1117/12.2085982

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