20 March 2015 Effect of molecular resist structure on glass transition temperature and lithographic performance in epoxide functionalized negative tone resists
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Abstract
A series of five negative tone epoxide functionalized molecular resists have been synthesized and have had their glass transition temperature (Tg) and lithographic contrast behavior characterized. Introducing rigid structural features in the form of aromatic rings to a resist was found to increase its glass transition temperature. All resists but one, BHPF-2Ep, were found to have poor film stability which required the use of an underlayer. A trend was observed where PEB conditions performed at temperatures much higher than the Tg of the molecular resist was found to induce propagation of polymerization outside of exposed regions. Di-functionalized resists were observed to have poor sensitivity due to their low degree of functionalization. A resist was synthesized (BHPF-2Ep) which was capable of resolving features down to 20 nm with an imaging dose of 70.5 mJ/cm2.
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Hannah Narcross, Hannah Narcross, Richard A Lawson, Richard A Lawson, Brandon Sharp, Brandon Sharp, Jun Sung Chun, Jun Sung Chun, Mark Neisser, Mark Neisser, Laren M. Tolbert, Laren M. Tolbert, Clifford L. Henderson, Clifford L. Henderson, } "Effect of molecular resist structure on glass transition temperature and lithographic performance in epoxide functionalized negative tone resists", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250C (20 March 2015); doi: 10.1117/12.2086027; https://doi.org/10.1117/12.2086027
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