20 March 2015 Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives
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Abstract
One of the key challenges to high resolution resist patterning is probing the resist properties at length scales commensurate with the pattern size. Using a new scanning probe microscopy (SPM), Peak Force™ tapping, we map exposure dependent nanoscale modulus of the exposed/developed resist patterns with sub-10 nm resolution. By innovative electron beam exposure pattern design, the SPM technique reveals that resist modulus follows the height contrast profile, but with a shift to higher exposure doses. SEM image analysis of patterned resist structures confirm that the best line-space patterns are achieved at exposure dose where modulus reaches its maximum and shows how modulus can be used to probe patternability of resist systems.
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Prashant Kulshreshtha, Ken Maruyama, Scott Dhuey, Dominik Ziegler, Weilun Chao, Paul Ashby, Deirdre Olynick, "Revealing beam-induced chemistry using modulus mapping in negative-tone EUV/e-beam resists with and without cross-linker additives", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250I (20 March 2015); doi: 10.1117/12.2086045; https://doi.org/10.1117/12.2086045
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