20 March 2015 Organic hard masks utilizing fullerene derivatives
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Abstract
We have developed a series of fullerene containing materials for use as organic hard masks. Films with a thickness of up to 250 nm were deposited via spin coating. After a crosslinking bake the films exhibit good thermal stability – in the best case a mass loss of less than 3% at 400 °C is seen. Etch resistance of the different formulations are presented and hig-hresolution patterning is demonstrated. During the transfer into silicon no adverse “wiggling” is observed at high resolution. We attribute this to the low levels of aliphatic hydrogen present in the materials.
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Andreas Frommhold, Andreas Frommhold, Alan G. Brown, Alan G. Brown, Richard E. Palmer, Richard E. Palmer, Tom Lada, Tom Lada, Alex P. Robinson, Alex P. Robinson, } "Organic hard masks utilizing fullerene derivatives", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250L (20 March 2015); doi: 10.1117/12.2085675; https://doi.org/10.1117/12.2085675
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