20 March 2015 Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch
Author Affiliations +
The self-assembling behavior of thermally annealed PS-b-PMMA block copolymer derivatives (GEN2 BCPs) was evaluated using a substrate modified by a random copolymer, commonly called a ‘brush’. Similar to PS-b-PMMA, surface modification using the random copolymer brush served as an effective technique for controlling the domain orientation of the GEN2 BCP and yielded aligned features with pitches below 24nm. Non-preferential and weakly preferential random copolymers were also defined and applied to DSA using a graphoepitaxial approach. Finally, a Dry Development Rinse Process (DDRP)[1] was tested as a method to prevent pattern collapse and improve pattern transfer for GEN2 BCPs.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eungnak Han, Eungnak Han, Todd R. Younkin, Todd R. Younkin, Manish Chandhok, Manish Chandhok, Alan M. Myers, Alan M. Myers, Tristan A. Tronic, Tristan A. Tronic, Florian Gstrein, Florian Gstrein, Kranthi Kumar Elineni, Kranthi Kumar Elineni, Ashish Gaikwad, Ashish Gaikwad, Paul A. Nyhus, Paul A. Nyhus, Praveen K. Setu, Praveen K. Setu, Charles H. Wallace, Charles H. Wallace, "Material readiness for generation 2 directed self-assembly (DSA) < 24nm pitch", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250O (20 March 2015); doi: 10.1117/12.2086094; https://doi.org/10.1117/12.2086094

Back to Top