20 March 2015 Directed self-assembly of topcoat-free, integration-friendly high-x block copolymers
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To extend scaling beyond poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for directed self-assembly (DSA), high quality organic high-x block copolymers (HC series) were developed and applied to implementation of sub-10 nm L/S DSA. Lamellae-forming block copolymers (BCPs) of the HC series showed the ability to form vertically oriented polymer domains conveniently with the in-house PS-r-PMMA underlayers (AZEMBLY EXP NLD series) without the use of an additional topcoat. The orientation control was achieved with low bake temperatures (≤200 °C) and short bake times (≤5 min). Also, these process-friendly materials are compatible with existing 193i-based graphoepitaxy and chemoepitaxy DSA schemes. In addition, it is notable that 8.5 nm organic lamellae domains were amenable to pattern development by simple dry etch techniques. These successful demonstrations of high-x L/S DSA on 193i-defined guiding patterns and pattern development can offer a feasible route to access sub-10 nm node patterning technology.
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Eri Hirahara, Eri Hirahara, Margareta Paunescu, Margareta Paunescu, Orest Polishchuk, Orest Polishchuk, EunJeong Jeong, EunJeong Jeong, Edward Ng, Edward Ng, Jianhui Shan, Jianhui Shan, Jihoon Kim, Jihoon Kim, SungEun Hong, SungEun Hong, Durairaj Baskaran, Durairaj Baskaran, Guanyang Lin, Guanyang Lin, Ankit Vora, Ankit Vora, Melia Tjio, Melia Tjio, Noel Arellano, Noel Arellano, Charles T. Rettner, Charles T. Rettner, Elizabeth Lofano, Elizabeth Lofano, Chi-Chun Liu, Chi-Chun Liu, Hsinyu Tsai, Hsinyu Tsai, Anindarupa Chunder, Anindarupa Chunder, Khanh Nguyen, Khanh Nguyen, Alexander M. Friz, Alexander M. Friz, Amy N. Bowers, Amy N. Bowers, Srinivasan Balakrishnan, Srinivasan Balakrishnan, Joy Y. Cheng, Joy Y. Cheng, Daniel P. Sanders, Daniel P. Sanders, "Directed self-assembly of topcoat-free, integration-friendly high-x block copolymers", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250P (20 March 2015); doi: 10.1117/12.2087398; https://doi.org/10.1117/12.2087398

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