20 March 2015 Development of EUV chemically amplified resist which has novel protecting group
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Abstract
Extreme Ultra Violet (EUV) Lithography is being thought to be one of the most promising candidate technologies to replace current optical lithography for the high-volume manufacturing of semiconductor devices at the 10 nm node and below. Through-put still seems to be under the target, so EUV resist materials are strongly required high resolution (R) with high sensitivity (S) and low line edge/width roughness (L). However, the chemically amplified resists should overcome RLS-trade-off. We focused on the development of EUV resist by the combination of the low activation energy protecting group (PG) and high quantum yield PAG for overcoming RLS trade-off.
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Shogo Matsumaru, Tatsuya Fujii, Takashi Kamizono, Kenta Suzuki, Hiroto Yamazaki, Masatoshi Arai, Yoshitaka Komuro, Akiya Kawaue, Daisuke Kawana, Taku Hirayama, Katsumi Ohmori, "Development of EUV chemically amplified resist which has novel protecting group", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250U (20 March 2015); doi: 10.1117/12.2087197; https://doi.org/10.1117/12.2087197
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