20 March 2015 Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist
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Abstract
This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good agreement with earlier single-pixel SHIBL experiments for determining line width as a function of dose for a desired line-and-space pattern. Furthermore, we propose optimized-pixel-dose SHIBL to improve exposure latitude, LCDU and LWR. Dose optimization is advantageous to single-pixel exposure when the feature size is at least about twice the width of the FWHM of the point-spread function. We confirm this by comparing our modeling results for single-pixel and optimizedpixel- dose exposure modes for line-and-space patterns
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Nima Kalhor, Nima Kalhor, Wouter Mulckhuyse, Wouter Mulckhuyse, Paul Alkemade, Paul Alkemade, Diederik Maas, Diederik Maas, "Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942513 (20 March 2015); doi: 10.1117/12.2085791; https://doi.org/10.1117/12.2085791
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