20 March 2015 Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process
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Directed Self-Assembly (DSA) of Block Co-Polymer (BCP) with conventional lithography is being thought as one of the potential patterning solution for future generation devices manufacturing. Many studies have been reported to fabricate the aligned patterns both on grapho and chemoepitaxy for semiconductor application1, 2. The hole shrink and multiplication by graphoepitaxy are one of the DSA implementation candidates in terms of relatively realistic process and versatility of chip design. The critical challenges on hole shrink and multiplication by using conventional Poly (styrene-b-methyl methacrylate) (PS-b-PMMA) BCP have been reported such as CD uniformity, placement error3 and defectivity. It is needed to overcome these challenging issues by improving not only whole process but materials. From the material aspect, the surface treatment material for guide structure, and process friendly BCP material are key development items on graphoepitaxy. In this paper, it will be shown in BCP approach about conventional PS-b-PMMA with additives and new casting solvent as PS-b-PMMA extension for CD uniformity and placement error improvement and then it’ll be discussed on what is the key factor and solution from BCP material approach.
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Tasuku Matsumiya, Tasuku Matsumiya, Tsuyoshi Kurosawa, Tsuyoshi Kurosawa, Masahito Yahagi, Masahito Yahagi, Hitoshi Yamano, Hitoshi Yamano, Ken Miyagi, Ken Miyagi, Takaya Maehashi, Takaya Maehashi, Issei Suzuki, Issei Suzuki, Akiya Kawaue, Akiya Kawaue, Yoshitaka Komuro, Yoshitaka Komuro, Taku Hirayama, Taku Hirayama, Katsumi Ohmori, Katsumi Ohmori, "Block co-polymer approach for CD uniformity and placement error improvement in DSA hole grapho-epitaxy process", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942517 (20 March 2015); doi: 10.1117/12.2087009; https://doi.org/10.1117/12.2087009


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