Evaluation of novel lactone derivatives for chemically amplified EUV resists

Hiroyasu Tanaka; Tetsuhiko Mizusaka; Hiroyuki Tanagi; Kikuo Furukawa; Hiroki Yamamoto; Takahiro Kozawa

doi:10.1117/12.2083755

20 March 2015 Evaluation of novel lactone derivatives for chemically amplified EUV resists

Hiroyasu Tanaka, Tetsuhiko Mizusaka, Hiroyuki Tanagi, Kikuo Furukawa, Hiroki Yamamoto, Takahiro Kozawa

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94251R (2015) https://doi.org/10.1117/12.2083755
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

EUV lithography is the most favorable process for high volume manufacturing of semiconductor devices beyond 1X nm half-pitch at present. Many efforts have revealed effective proton sources in acid generation in EUV resists, and the effective proton generation and the control of the generated acid diffusion are required to improve the breakthrough of the resolution － line width roughness － sensitivity(RLS) trade-off. To clarify the lithographic performance of these derivatives, we synthesized the acrylic ter/tetrapolymers containing novel lactone derivatives - LCHO and LAATB - as model photopolymers and exposed the resist samples based on these polymers to EUV and EB radiation. On the basis of the lithographic performances of these photoresists, we evaluated the characteristics of lactone derivatives upon exposure to EUV radiation. We discuss the relationship between the chemical structures of these derivatives and lithographic performance.

Citation Download Citation

Hiroyasu Tanaka, Tetsuhiko Mizusaka, Hiroyuki Tanagi, Kikuo Furukawa, Hiroki Yamamoto, and Takahiro Kozawa "Evaluation of novel lactone derivatives for chemically amplified EUV resists", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251R (20 March 2015); https://doi.org/10.1117/12.2083755

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