Top-coatless 193nm positive-tone development immersion resist for logic application

Lian Cong Liu; Tsung Ju Yeh; Yeh-Sheng Lin; Yu Chin Huang; Chien Wen Kuo; Wen Liang Huang; Chia Hung Lin; Chun Chi Yu; Ray Hsu; I-Yuan Wan; Jeff Lin; Kwang-Hwyi Im; Hae Jin Lim; Hyun K. Jeon; Yasuhiro Suzuki; Cheng Bai Xu

doi:10.1117/12.2086348

20 March 2015 Top-coatless 193nm positive-tone development immersion resist for logic application

Lian Cong Liu, Tsung Ju Yeh, Yeh-Sheng Lin, Yu Chin Huang, Chien Wen Kuo, Wen Liang Huang, Chia Hung Lin, Chun Chi Yu, Ray Hsu, I-Yuan Wan, Jeff Lin, Kwang-Hwyi Im, Hae Jin Lim, Hyun K. Jeon, Yasuhiro Suzuki, Cheng Bai Xu

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94251T (2015) https://doi.org/10.1117/12.2086348
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

Citation Download Citation

Lian Cong Liu, Tsung Ju Yeh, Yeh-Sheng Lin, Yu Chin Huang, Chien Wen Kuo, Wen Liang Huang, Chia Hung Lin, Chun Chi Yu, Ray Hsu, I-Yuan Wan, Jeff Lin, Kwang-Hwyi Im, Hae Jin Lim, Hyun K. Jeon, Yasuhiro Suzuki, and Cheng Bai Xu "Top-coatless 193nm positive-tone development immersion resist for logic application", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251T (20 March 2015); https://doi.org/10.1117/12.2086348

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available