20 March 2015 Top-coatless 193nm positive-tone development immersion resist for logic application
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Abstract
In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.
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Lian Cong Liu, Tsung Ju Yeh, Yeh-Sheng Lin, Yu Chin Huang, Chien Wen Kuo, Wen Liang Huang, Chia Hung Lin, Chun Chi Yu, Ray Hsu, I-Yuan Wan, Jeff Lin, Kwang-Hwyi Im, Hae Jin Lim, Hyun K. Jeon, Yasuhiro Suzuki, Cheng Bai Xu, "Top-coatless 193nm positive-tone development immersion resist for logic application", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94251T (20 March 2015); doi: 10.1117/12.2086348; https://doi.org/10.1117/12.2086348
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