20 March 2015 Evaluation of novel processing approaches to improve extreme ultraviolet (EUV) photoresist pattern quality
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Recently there has been a great deal of effort focused on increasing EUV scanner source power; which is correlated to increased wafer throughput of production systems. Another way of increasing throughput would be to increase the photospeed of the photoresist used. However increasing the photospeed without improving the overall lithographic performance, such as local critical dimension uniformity (L-CDU) and process window, does not deliver the overall improvements required for a high volume manufacturing (HVM). This paper continues a discussion started in prior publications [Ref 3,4,6], which focused on using readily available process tooling (currently in use for 193 nm double patterning applications) and the existing EUV photoresists to increase photospeed (lower dose requirement) for line and space applications. Techniques to improve L-CDU for contact hole applications will also be described.
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Cecilia Montgomery, Cecilia Montgomery, Jun Sung Chun, Jun Sung Chun, Yu-Jen Fan, Yu-Jen Fan, Shih-Hui Jen, Shih-Hui Jen, Mark Neisser, Mark Neisser, Kevin D. Cummings, Kevin D. Cummings, Warren Montgomery, Warren Montgomery, Takashi Saito, Takashi Saito, Lior Huli, Lior Huli, David Hetzer, David Hetzer, Hiroie Matsumoto, Hiroie Matsumoto, Andrew Metz, Andrew Metz, Vinayak Rastogi, Vinayak Rastogi, } "Evaluation of novel processing approaches to improve extreme ultraviolet (EUV) photoresist pattern quality", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942526 (20 March 2015); doi: 10.1117/12.2086982; https://doi.org/10.1117/12.2086982

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