In the first section of this study, the impact of increasing E95 bandwidth was investigated to observe the lithographic process control response of the specified logic features. In the second section, a preliminary assessment of the impact of lower E95 bandwidth was performed. The impact of lower E95 bandwidth on local intensity variability was monitored through the CDU of line end features and the LWR power spectral density (PSD) of line/space patterns. The investigation found that the imec N10 test vehicle (with OPC optimized for standard E95 bandwidth of300fm) features exposed at 200fm showed pattern specific responses, suggesting areas of potential interest for further investigation.
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Paolo Alagna, Omar Zurita, Vadim Timoshkov, Patrick Wong, Gregory Rechtsteiner, Jan Baselmans, Julien Mailfert, "Optimum ArFi laser bandwidth for 10nm node logic imaging performance," Proc. SPIE 9426, Optical Microlithography XXVIII, 942609 (18 March 2015);