18 March 2015 Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography
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Abstract
Diffractive mask-aligner lithography is capable to print structures that have a sub-500-nanometer resolution by using non-contact mode. This requires the use of specially designed phase-masks and dedicated illumination conditions in the Mask-Aligner to obtain the optimal exposure conditions, a spectral filter and a polarizer needs to be placed in the beam path. We introduce here mask designs that includes a polarizer on the top side of a photo-mask and a diffractive element on the bottom one. This enables printing of high resolution structures of arbitrary orientation by using a classical mask-aligner in proximity exposure mode.
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Yannick Bourgin, Yannick Bourgin, Thomas Siefke, Thomas Siefke, Thomas Käsebier, Thomas Käsebier, Ernst-Bernhard Kley, Ernst-Bernhard Kley, Uwe D. Zeitner, Uwe D. Zeitner, } "Double-sided diffractive photo-mask for sub-500nm resolution proximity i-line mask-aligner lithography", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260E (18 March 2015); doi: 10.1117/12.2085777; https://doi.org/10.1117/12.2085777
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