Paper
18 March 2015 Mask-induced best-focus-shifts in DUV and EUV lithography
Author Affiliations +
Abstract
The mask plays a significant role as an active optical element in lithography, for both EUV and immersion lithography. Mask-induced and feature dependent shifts of the best focus position and other aberration-like effects were reported both for deep ultraviolet (DUV) immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, and Paul Gräupner "Mask-induced best-focus-shifts in DUV and EUV lithography", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260H (18 March 2015); https://doi.org/10.1117/12.2086346
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Deep ultraviolet

Extreme ultraviolet

Photomasks

Refractive index

Extreme ultraviolet lithography

Electroluminescent displays

Polarization

RELATED CONTENT

Evaluation of methods to improve EUV OPC model accuracy
Proceedings of SPIE (April 01 2013)
EUV OPC for the 20-nm node and beyond
Proceedings of SPIE (March 23 2012)
EUV mask: detection studies with Aera2
Proceedings of SPIE (April 20 2010)

Back to Top