18 March 2015 Mask-induced best-focus-shifts in DUV and EUV lithography
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Abstract
The mask plays a significant role as an active optical element in lithography, for both EUV and immersion lithography. Mask-induced and feature dependent shifts of the best focus position and other aberration-like effects were reported both for deep ultraviolet (DUV) immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively.
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Andreas Erdmann, Andreas Erdmann, Peter Evanschitzky, Peter Evanschitzky, Jens Timo Neumann, Jens Timo Neumann, Paul Gräupner, Paul Gräupner, } "Mask-induced best-focus-shifts in DUV and EUV lithography", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260H (18 March 2015); doi: 10.1117/12.2086346; https://doi.org/10.1117/12.2086346
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