18 March 2015 Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners
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Abstract
The physical process of mask manufacturing produces absorber geometry with significantly less than 90 degree fidelity at corners. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state of the art models for corner rounding employ “chopping” a 90 degree mask corner, replacing the corner with a small 45 degree edge. In this paper, a methodology is presented to approximate the impact of 3D EMF effects introduced by corners with rounded edges. The approach is integrated into a full chip 3D mask simulation methodology based on the Domain Decomposition Method (DDM) with edge to edge crosstalk correction.
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Michael Lam, Michael Lam, Chris H. Clifford, Chris H. Clifford, Michael Oliver, Michael Oliver, David Fryer, David Fryer, Edita Tejnil, Edita Tejnil, Kostas Adam, Kostas Adam, } "Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260P (18 March 2015); doi: 10.1117/12.2085671; https://doi.org/10.1117/12.2085671
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