18 March 2015 Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners
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The physical process of mask manufacturing produces absorber geometry with significantly less than 90 degree fidelity at corners. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state of the art models for corner rounding employ “chopping” a 90 degree mask corner, replacing the corner with a small 45 degree edge. In this paper, a methodology is presented to approximate the impact of 3D EMF effects introduced by corners with rounded edges. The approach is integrated into a full chip 3D mask simulation methodology based on the Domain Decomposition Method (DDM) with edge to edge crosstalk correction.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Lam, Michael Lam, Chris H. Clifford, Chris H. Clifford, Michael Oliver, Michael Oliver, David Fryer, David Fryer, Edita Tejnil, Edita Tejnil, Kostas Adam, Kostas Adam, "Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260P (18 March 2015); doi: 10.1117/12.2085671; https://doi.org/10.1117/12.2085671

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