18 March 2015 Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies
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Abstract
One of the main concerns about EUV lithography is whether or not it can be extended to very high numerical aperture. Recently, a waveguide effect in high-NA EUV lithography was observed. This effect serves to overcome the problem of shadowing in EUV lithography and allows EUV lithography to be extended to the 4-nm node. In this paper, an exact eigenmode analysis is presented to explain the observed effect. This waveguide effect is then applied to simulate the printing of 4-nm lines and spaces with excellent aerial-image contrast and peak intensity. The feasibility of EUV lithography for printing logic circuits containing general 2D patterns with 4-nm feature size is also demonstrated.
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Michael S Yeung, Eytan Barouch, "Printing circuits with 4nm feature size: similarities and differences between EUV and optical lithographies", Proc. SPIE 9426, Optical Microlithography XXVIII, 94260R (18 March 2015); doi: 10.1117/12.2087322; https://doi.org/10.1117/12.2087322
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