26 March 2015 Hot spots prediction after etching process based on defect rate
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Abstract
A resist cross-sectional profile becomes worse as feature sizes shrink. The bad resist profile could result in a hotspot after etching process (after-etch hotspot). Conventional simulation method is difficult to detect such hotspots accurately because it does not consider process variation. In this paper, we propose an accurate after-etch hotspot detection methodology with consideration of process variation based on optical intensity and defect rate. An experimental result shows our method can detect an after-etch hotspot accurately.
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Taiki Kimura, Yuki Watanabe, Toshiya Kotani, "Hot spots prediction after etching process based on defect rate", Proc. SPIE 9426, Optical Microlithography XXVIII, 942610 (26 March 2015); doi: 10.1117/12.2085726; https://doi.org/10.1117/12.2085726
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