18 March 2015 Hybrid OPC flow with pattern search and replacement
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Abstract
Optical Proximity Correction (OPC) is a compute-intensive process used to generate photolithography mask shapes at advanced VLSI nodes. Previously, we reported a modified two-step OPC flow which consists of a first pattern replacement step followed by a model based OPC correction step [1]. We build on this previous work and show how this hybrid flow not only improves full chip OPC runtime, but also significantly improves mask correction consistency and overall mask quality. This is demonstrated using a design from the 20nm node, which requires the use of model based SRAF followed by model based OPC to obtain the full mask solution.
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Piyush Verma, Shikha Somani, Yang Y. Ping, Piyush Pathak, Rani S. Ghaida, Carl P. Babcock, Fadi Batarseh, Jingyu Wang, Sriram Madhavan, Sarah McGowan, "Hybrid OPC flow with pattern search and replacement", Proc. SPIE 9426, Optical Microlithography XXVIII, 942611 (18 March 2015); doi: 10.1117/12.2087094; https://doi.org/10.1117/12.2087094
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