Paper
18 March 2015 Overlay improvement methods with diffraction based overlay and integrated metrology
Young-Sun Nam, Sunny Kim, Ju Hee Shin, Young Sin Choi, Sang Ho Yun, Young Hoon Kim, Si Woo Shin, Jeong Heung Kong, Young Seog Kang, Hun Hwan Ha
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Abstract
To accord with new requirement of securing more overlay margin, not only the optical overlay measurement is faced with the technical limitations to represent cell pattern’s behavior, but also the larger measurement samples are inevitable for minimizing statistical errors and better estimation of circumstance in a lot. From these reasons, diffraction based overlay (DBO) and integrated metrology (IM) were mainly proposed as new approaches for overlay enhancement in this paper.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young-Sun Nam, Sunny Kim, Ju Hee Shin, Young Sin Choi, Sang Ho Yun, Young Hoon Kim, Si Woo Shin, Jeong Heung Kong, Young Seog Kang, and Hun Hwan Ha "Overlay improvement methods with diffraction based overlay and integrated metrology", Proc. SPIE 9426, Optical Microlithography XXVIII, 942612 (18 March 2015); https://doi.org/10.1117/12.2087196
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Overlay metrology

Metrology

Semiconducting wafers

Diffraction

Target detection

Error analysis

Scanning electron microscopy

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