Latest performance of ArF immersion scanner NSR-S630D for high-volume manufacturing for 7nm node

Takayuki Funatsu; Yusaku Uehara; Yujiro Hikida; Akira Hayakawa; Satoshi Ishiyama; Toru Hirayama; Hirotaka Kono; Yosuke Shirata; Yuichi Shibazaki

doi:10.1117/12.2085735

18 March 2015 Latest performance of ArF immersion scanner NSR-S630D for high-volume manufacturing for 7nm node

Takayuki Funatsu, Yusaku Uehara, Yujiro Hikida, Akira Hayakawa, Satoshi Ishiyama, Toru Hirayama, Hirotaka Kono, Yosuke Shirata, Yuichi Shibazaki

Author Affiliations +

Proceedings Volume 9426, Optical Microlithography XXVIII; 942617 (2015) https://doi.org/10.1117/12.2085735
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In order to achieve stable operation in cutting-edge semiconductor manufacturing, Nikon has developed NSR-S630D with extremely accurate overlay while maintaining throughput in various conditions resembling a real production environment. In addition, NSR-S630D has been equipped with enhanced capabilities to maintain long-term overlay stability and user interface improvement all due to our newly developed application software platform. In this paper, we describe the most recent S630D performance in various conditions similar to real productions. In a production environment, superior overlay accuracy with high dose conditions and high throughput are often required; therefore, we have performed several experiments with high dose conditions to demonstrate NSR’s thermal aberration capabilities in order to achieve world class overlay performance. Furthermore, we will introduce our new software that enables long term overlay performance.

Citation Download Citation

Takayuki Funatsu, Yusaku Uehara, Yujiro Hikida, Akira Hayakawa, Satoshi Ishiyama, Toru Hirayama, Hirotaka Kono, Yosuke Shirata, and Yuichi Shibazaki "Latest performance of ArF immersion scanner NSR-S630D for high-volume manufacturing for 7nm node", Proc. SPIE 9426, Optical Microlithography XXVIII, 942617 (18 March 2015); https://doi.org/10.1117/12.2085735

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