18 March 2015 New ArF immersion light source introduces technologies for high-volume 14nm manufacturing and beyond
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Abstract
Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Multi-patterning lithography solutions to extend deep-UV (DUV) immersion have driven requirements such as higher throughput and higher efficiencies to maximize the utilization of leading-edge lithography equipment. Three key light source parameters have direct influence on patterning performance – energy, wavelength and bandwidth stability – and they have been the primary areas of continuous improvement. With 14nm node development, a number of studies have shown the direct influence of bandwidth stability on CD uniformity for certain patterns and geometries, leading to the desire for further improvements in this area. More recent studies also examined the impact of bandwidth on 10nm logic node patterning [1]. Alongside these drivers, increasing cost per patterning layer continues to demand further improvements in operating costs and efficiencies from the lithography tools, and the light source can offer further gains in these areas as well. This paper introduces several light source technologies that are embodied in a next-generation light source, the Cymer XLR® 700ix, which is an extension of the ring laser architecture introduced 8 years ago. These technologies enable a significant improvement in bandwidth stability as well as notable reductions in operating costs through more efficient gas management algorithms and lower facilities costs.
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T. Cacouris, W. Conley, J. Thornes, T. Bibby, J. Melchior, T. Aggarwal, E. Gross, "New ArF immersion light source introduces technologies for high-volume 14nm manufacturing and beyond", Proc. SPIE 9426, Optical Microlithography XXVIII, 942618 (18 March 2015); doi: 10.1117/12.2085968; https://doi.org/10.1117/12.2085968
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