Demonstration of the benefits of these technologies is provided through results from recent experiments at imec. Changes in patterning performance are characterized using top down CD-SEM metrology, enabling excellent correlation between optical parameters and on wafer attributes for typical patterning geometries. In addition, new results show that changes in laser beam parameter performance can have measurable wafer patterning and/or illumination impacts. Chipmakers can benefit from the use of this capability to perform proactive, comprehensive characterization of current and next generation process nodes.
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Paolo Alagna, Omar Zurita, Gregory Rechtsteiner, "Advanced process characterization using light source performance modulation and monitoring," Proc. SPIE 9426, Optical Microlithography XXVIII, 94261D (18 March 2015);