In this paper, we introduce a new HSF method that is able to make OPC TAT shorter than the common HSF method. The new HSF method consists of two concepts. The first one is that OPC target point is controlled to fix HSP. Here, the target point should be moved to optimum position at where the edge placement error (EPE) can be 0 at critical points. Many parameters such as a model accuracy or an OPC recipe become the cause of larger EPE. The second one includes controlling of model offset error through target point adjustment. Figure 1 shows the case EPE is not 0. It means that the simulation contour was not targeted well after OPC process. On the other hand, Figure 2 shows the target point is moved -2.5nm by using target point control function. As a result, simulation contour is matched to the original layout. This function can be powerfully adapted to OPC procedure of memory and logic devices.
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Seongjin Kim, Munhoe Do, Yongbae An, Jaeseung Choi, Hyunjo Yang, Donggyu Yim, "Model-based HSF using by target point control function," Proc. SPIE 9426, Optical Microlithography XXVIII, 94261X (18 March 2015);