On the other hand, since the resist pattern CD for the most advanced resist is very much different from the prediction of optical simulation, it is a challenge to build OPC models using the exposure result with the resist. In order to solve this issue, we have tried to use several litho parameters to reduce the gap between optical simulation and resist CDs for OPC modeling. In this paper we discuss the effect of the parameters to reduce the gap between optical model and actual resist behavior with keeping superior performance as much as possible. The method we mention may be a key to use the most advanced resist in near future. As a result the life of ArF immersion lithography in the critical layer would be extended than we expect today.
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Zhengkai Yang, Wuping Wang, Quan Chen, Hajime Aoyama, Kengo Takemasa, Toshihiko Sei, Tami Miyazawa, Tomoyuki Matsuyama, Chun Shao, "The study of lithography conditions to use advanced resist performance properly," Proc. SPIE 9426, Optical Microlithography XXVIII, 942621 (18 March 2015);