18 March 2015 Standard cell design in N7: EUV vs. immersion
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Abstract
While waiting for EUV lithography to become ready for adoption, we need to create designs compatible with both EUV single exposures as well as with 193i multiple splits strategy for technology nodes 7nm and below needed to keep the scaling trend intact. However, the standard approach of designing standard cells in two-dimensional directions is no more valid owing to insufficient resolution of 193-i scanner. Therefore, we propose a standard cell design methodology, which exploits purely one-dimensional interconnect.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bharani Chava, Bharani Chava, David Rio, David Rio, Yasser Sherazi, Yasser Sherazi, Darko Trivkovic, Darko Trivkovic, Werner Gillijns, Werner Gillijns, Peter Debacker, Peter Debacker, Praveen Raghavan, Praveen Raghavan, Ahmad Elsaid, Ahmad Elsaid, Mircea Dusa, Mircea Dusa, Abdelkarim Mercha, Abdelkarim Mercha, Julien Ryckaert, Julien Ryckaert, Diederik Verkest, Diederik Verkest, } "Standard cell design in N7: EUV vs. immersion", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270E (18 March 2015); doi: 10.1117/12.2085739; https://doi.org/10.1117/12.2085739
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