18 March 2015 Layout dependent effects analysis on 28nm process
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Advanced process nodes introduce new variability effects due to increased density, new material, new device structures, and so forth. This creates more and stronger Layout Dependent effects (LDE), especially below 28nm. These effects such as WPE (Well Proximity Effect), PSE (Poly Spacing Effect) change the carrier mobility and threshold voltage and therefore make the device performances, such as Vth and Idsat, extremely layout dependent. In traditional flows, the impact of these changes can only be simulated after the block has been fully laid out, the design is LVS and DRC clean. It’s too late in the design cycle and it increases the number of post-layout iteration. We collaborated to develop a method on an advanced process to embed several LDE sources into a LDE kit. We integrated this LDE kit in custom analog design environment, for LDE analysis at early design stage. These features allow circuit and layout designers to detect the variations caused by LDE, and to fix the weak points caused by LDE. In this paper, we will present this method and how it accelerates design convergence of advanced node custom analog designs by detecting early-on LDE hotspots on partial or fully placed layout, reporting contribution of each LDE component to help identify the root cause of LDE variation, and even providing fixing guidelines on how to modify the layout and to reduce the LDE impact.
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Helen Li, Helen Li, Mealie Zhang, Mealie Zhang, Waisum Wong, Waisum Wong, Huiyuan Song, Huiyuan Song, Wei Xu, Wei Xu, Philippe Hurat, Philippe Hurat, Hua Ding, Hua Ding, Yifan Zhang, Yifan Zhang, Michel Cote, Michel Cote, Jason Huang, Jason Huang, Ya-ch Lai, Ya-ch Lai, "Layout dependent effects analysis on 28nm process", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270F (18 March 2015); doi: 10.1117/12.2087443; https://doi.org/10.1117/12.2087443

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