18 March 2015 Breaking through 1D layout limitations and regaining 2D design freedom Part I: 2D layout decomposition and stitching techniques for hybrid optical and self-aligned multiple patterning
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Abstract
To break through 1-D IC layout limitations, we develop computationally efficient 2-D layout decomposition and stitching techniques which combine the optical and self-aligned multiple patterning (SAMP) processes. A polynomial time algorithm is developed to decompose the target layout into two components, each containing one or multiple sets of unidirectional features that can be formed by a SAMP+cut/block process. With no need of connecting vias, the final 2-D features are formed by directly stitching two components together. This novel patterning scheme is considered as a hybrid approach as the SAMP processes offer the capability of density scaling while the stitching process creates 2-D design freedom as well as the multiple-CD/pitch capability. Its technical advantages include significant reduction of via steps and avoiding the interdigitating types of multiple patterning (for density multiplication) to improve the processing yield. The developed decomposition and synthesis algorithms are tested using 2-D layouts from NCSU open cell library. Statistical and computational characteristics of these public layout data are investigated and discussed.
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Hongyi Liu, Jun Zhou, Yijian Chen, "Breaking through 1D layout limitations and regaining 2D design freedom Part I: 2D layout decomposition and stitching techniques for hybrid optical and self-aligned multiple patterning", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270G (18 March 2015); doi: 10.1117/12.2085738; https://doi.org/10.1117/12.2085738
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