18 March 2015 Incorporating DSA in multipatterning semiconductor manufacturing technologies
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Multi-patterning (MP) is the process of record for many sub-10nm process technologies. The drive to higher densities has required the use of double and triple patterning for several layers; but this increases the cost of the new processes especially for low volume products in which the mask set is a large percentage of the total cost. For that reason there has been a strong incentive to develop technologies like Directed Self Assembly (DSA), EUV or E-beam direct write to reduce the total number of masks needed in a new technology node. Because of the nature of the technology, DSA cylinder graphoepitaxy only allows single-size holes in a single patterning approach. However, by integrating DSA and MP into a hybrid DSA-MP process, it is possible to come up with decomposition approaches that increase the design flexibility, allowing different size holes or bar structures by independently changing the process for every patterning step. A simple approach to integrate multi-patterning with DSA is to perform DSA grouping and MP decomposition in sequence whether it is: grouping-then-decomposition or decomposition-then-grouping; and each of the two sequences has its pros and cons. However, this paper describes why these intuitive approaches do not produce results of acceptable quality from the point of view of design compliance and we highlight the need for custom DSA-aware MP algorithms.
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Yasmine Badr, Yasmine Badr, J. Andres Torres, J. Andres Torres, Yuansheng Ma, Yuansheng Ma, Joydeep Mitra, Joydeep Mitra, Puneet Gupta, Puneet Gupta, "Incorporating DSA in multipatterning semiconductor manufacturing technologies", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270P (18 March 2015); doi: 10.1117/12.2084776; https://doi.org/10.1117/12.2084776

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