20nm CMP model calibration with optimized metrology data and CMP model applications

Ushasree Katakamsetty; Dinesh Koli; Sky Yeo; Colin Hui; Ruben G. Ghulghazaryan; Burak Aytuna; Jeff Wilson

doi:10.1117/12.2085728

18 March 2015 20nm CMP model calibration with optimized metrology data and CMP model applications

Ushasree Katakamsetty; Dinesh Koli; Sky Yeo; Colin Hui; Ruben G. Ghulghazaryan; Burak Aytuna; Jeff Wilson

Author Affiliations +

Proceedings Volume 9427, Design-Process-Technology Co-optimization for Manufacturability IX; 94270U (2015) https://doi.org/10.1117/12.2085728
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Chemical Mechanical Polishing (CMP) is the essential process for planarization of wafer surface in semiconductor manufacturing. CMP process helps to produce smaller ICs with more electronic circuits improving chip speed and performance. CMP also helps to increase throughput and yield, which results in reduction of IC manufacturer’s total production costs. CMP simulation model will help to early predict CMP manufacturing hotspots and minimize the CMP and CMP induced Lithography and Etch defects ^[2]. In the advanced process nodes, conventional dummy fill insertion for uniform density is not able to address all the CMP short-range, long-range, multi-layer stacking and other effects like pad conditioning, slurry selectivity, etc. In this paper, we present the flow for 20nm CMP modeling using Mentor Graphics CMP modeling tools to build a multilayer Cu-CMP model and study hotspots. We present the inputs required for good CMP model calibration, challenges faced with metrology collections and techniques to optimize the wafer cost. We showcase the CMP model validation results and the model applications to predict multilayer topography accumulation affects for hotspot detection. We provide the flow for early detection of CMP hotspots with Calibre CMPAnalyzer to improve Design-for-Manufacturability (DFM) robustness.

Citation Download Citation

Ushasree Katakamsetty, Ushasree Katakamsetty, Dinesh Koli, Dinesh Koli, Sky Yeo, Sky Yeo, Colin Hui, Colin Hui, Ruben G. Ghulghazaryan, Ruben G. Ghulghazaryan, Burak Aytuna, Burak Aytuna, Jeff Wilson, Jeff Wilson, } "20nm CMP model calibration with optimized metrology data and CMP model applications", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 94270U (18 March 2015); doi: 10.1117/12.2085728; https://doi.org/10.1117/12.2085728

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years