18 March 2015 The cell pattern correction through design-based metrology
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Abstract
Starting with the sub 2Xnm node, the process window becomes smaller and tighter than before. Pattern related error budget is required for accurate critical-dimension control of Cell layers. Therefore, lithography has been faced with its various difficulties, such as weird distribution, overlay error, patterning difficulty etc. The distribution of cell pattern and overlay management are the most important factors in DRAM field. We had been experiencing that the fatal risk is caused by the patterns located in the tail of the distribution. The overlay also induces the various defect sources and misalignment issues. Even though we knew that these elements are important, we could not classify the defect type of Cell patterns. Because there is no way to gather massive small pattern CD samples in cell unit block and to compare layout with cell patterns by the CD-SEM. The CD- SEM is used in order to gather these data through high resolution, but CD-SEM takes long time to inspect and extract data because it measures the small FOV. (Field Of View) However, the NGR(E-beam tool) provides high speed with large FOV and high resolution. Also, it’s possible to measure an accurate overlay between the target layout and cell patterns because they provide DBM. (Design Based Metrology) By using massive measured data, we extract the result that it is persuasive by applying the various analysis techniques, as cell distribution and defects, the pattern overlay error correction etc. We introduce how to correct cell pattern, by using the DBM measurement, and new analysis methods.
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Yonghyeon Kim, Kweonjae Lee, Jinman Chang, Taeheon Kim, Daehan Han, Kyusun Lee, Aeran Hong, Jinyoung Kang, Bumjin Choi, Joosung Lee, Kyehee Yeom, Jooyoung Lee, Hyeongsun Hong, Kyupil Lee, Gyoyoung Jin, "The cell pattern correction through design-based metrology", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 942713 (18 March 2015); doi: 10.1117/12.2085004; https://doi.org/10.1117/12.2085004
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