Breaking through 1D layout limitations and regaining 2D design freedom part II: stitching yield modeling and optimization

Jun Zhou; Hongyi Liu; Ting Han; Yijian Chen

doi:10.1117/12.2085898

18 March 2015 Breaking through 1D layout limitations and regaining 2D design freedom part II: stitching yield modeling and optimization

Jun Zhou, Hongyi Liu, Ting Han, Yijian Chen

Author Affiliations +

Proceedings Volume 9427, Design-Process-Technology Co-optimization for Manufacturability IX; 942714 (2015) https://doi.org/10.1117/12.2085898
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In this paper, a stitch database is built from various identified stitching structures in an open-cell layout library. The corresponding stitching yield models are developed for the hybrid optical and self-aligned multiple patterning (hybrid SAMP). Based on the concept of probability-of-success (POS) function, we first develop a single-stitching yield model to quantify the effects of overlay errors and cut-hole CD variations. The overhang distance designed in a stitching process (or its mean value μ) is found to be critical to the stitching yield performance and can be optimized using this yield model. We also investigate the physical significance of several process parameters such as half pitch (HP), standard deviation (σ) of the random overhang distribution, and cut-hole CD (CL). Our study shows that certain types of stitching yield are sensitive to σ and HP, while in general high yield can be achieved for a large number of stitching types we examined. To improve the yield of certain challenging stitching structures, various layout modification strategies are proposed and discussed.

Citation Download Citation

Jun Zhou, Hongyi Liu, Ting Han, and Yijian Chen "Breaking through 1D layout limitations and regaining 2D design freedom part II: stitching yield modeling and optimization", Proc. SPIE 9427, Design-Process-Technology Co-optimization for Manufacturability IX, 942714 (18 March 2015); https://doi.org/10.1117/12.2085898

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