Front Matter: Volume 9428
Proc. SPIE 9428, Front Matter: Volume 9428, 942801 (23 April 2015); doi: 10.1117/12.2193022
Nanopatterning for Advanced Logic and Memory Technology Nodes
Proc. SPIE 9428, Etch patterning for advanced devices, 942805 (17 March 2015); doi: 10.1117/12.2085799
Proc. SPIE 9428, Challenges in high-aspect ratio contact (HARC) etching for DRAM capacitor formation, 942806 (17 March 2015); doi: 10.1117/12.2087765
Proc. SPIE 9428, Dry etch challenges for CD shrinkage in memory process, 942807 (17 March 2015); doi: 10.1117/12.2085628
Plasma and Resist Interactions, including Patterning Quality Control for LER, CD Uniformity, etc.
Proc. SPIE 9428, Patterning in the era of atomic scale fidelity, 942809 (17 March 2015); doi: 10.1117/12.2178326
Proc. SPIE 9428, Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL, 94280A (17 March 2015); doi: 10.1117/12.2087133
Proc. SPIE 9428, Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach, 94280B (17 March 2015); doi: 10.1117/12.2085812
Proc. SPIE 9428, H2 plasma and neutral beam treatment of EUV photoresist, 94280C (17 March 2015); doi: 10.1117/12.2085679
Patterning Integration Schemes: Multilayer Patterning, Self-Aligned Patterning, etc.
Proc. SPIE 9428, DSA planarization approach to solve pattern density issue, 94280D (17 March 2015); doi: 10.1117/12.2086810
Proc. SPIE 9428, Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP), 94280F (17 March 2015); doi: 10.1117/12.2086519
Proc. SPIE 9428, Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme, 94280G (17 March 2015); doi: 10.1117/12.2085016
Patterning Materials and Etch: Joint Session with Conferences 9425 and 9428
Proc. SPIE 9428, Photoresist performance modification through plasma treatment, 94280H (17 March 2015); doi: 10.1117/12.2085093
Proc. SPIE 9428, Finding practical phenomenological models that include both photoresist behavior and etch process effects, 94280I (17 March 2015); doi: 10.1117/12.2087096
Proc. SPIE 9428, Molecular glass resist performance for nano-pattern transfer, 94280J (17 March 2015); doi: 10.1117/12.2085828
New Plasma Sources and New Etching Technologies
Proc. SPIE 9428, Low-temperature and damage-free transition metal and magnetic material etching using a new metallic complex reaction, 94280N (17 March 2015); doi: 10.1117/12.2178327
Proc. SPIE 9428, Electron energy distribution control by fiat: breaking from the conventional flux ratio scaling rules in etch, 94280O (17 March 2015); doi: 10.1117/12.2086604
Emerging Patterning Technologies in DSA and Others
Proc. SPIE 9428, RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process, 94280S (17 March 2015); doi: 10.1117/12.2085704
Proc. SPIE 9428, A facile route for fabricating graphene nanoribbon array transistors using graphoepitaxy of a symmetric block copolymer, 94280T (17 March 2015); doi: 10.1117/12.2085836
Poster Session
Proc. SPIE 9428, Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr, 94280V (17 March 2015); doi: 10.1117/12.2085469
Proc. SPIE 9428, A way to integrate multiple block layers for middle of line contact patterning, 94280W (17 March 2015); doi: 10.1117/12.2086081
Proc. SPIE 9428, Synchronous pulsing plasma utilization in dummy poly gate removal process, 94280X (17 March 2015); doi: 10.1117/12.2086345
Proc. SPIE 9428, Characterization of the effect of etch process operating environment on the perfluoroelastomer chamber seal systems, 94280Y (17 March 2015); doi: 10.1117/12.2087324
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