Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Emmanuel Dupuy; E. Pargon; M. Fouchier; H. Grampeix; J. Pradelles; M. Darnon; P. Pimenta-Barros; S. Barnola; O. Joubert

doi:10.1117/12.2085812

17 March 2015 Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

Emmanuel Dupuy, E. Pargon, M. Fouchier, H. Grampeix, J. Pradelles, M. Darnon, P. Pimenta-Barros, S. Barnola, O. Joubert

Author Affiliations +

Proceedings Volume 9428, Advanced Etch Technology for Nanopatterning IV; 94280B (2015) https://doi.org/10.1117/12.2085812
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

We report a 20 nm half-pitch self-aligned double patterning (SADPP) process based on a resist-core approach. Line/space 20/20 nm features in silicon are successfully obtained with CD_variation, LWR and LER of 0.7 nm, 2.4 nm and 2.3 nm respectively. The LWR and LER are characterized at each technological step of the process using a power spectral density fitting method, which allows a spectral analysis of the roughness and the determination of unbiased roughness values. Although the SADP concept generates two asymmetric populations of lines, the final LLWR and LER are similar. We show that this SADP process allows to decrease significantly the LWR and the LER of about 62% and 48% compared to the initial photoresist patterns. This study also demonstrates that SADP is a very powerful concept to decrease CD uniformity and LWR especially in its low-frequency components to reach sub-20 nm node requirements. However, LER low-frequency components are still high and remain a key issue tot address for an optimized integration.

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Emmanuel Dupuy, E. Pargon, M. Fouchier, H. Grampeix, J. Pradelles, M. Darnon, P. Pimenta-Barros, S. Barnola, and O. Joubert "Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach", Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280B (17 March 2015); https://doi.org/10.1117/12.2085812

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