Paper
17 March 2015 DSA planarization approach to solve pattern density issue
P. Pimenta Barros, A. Gharbi, Aurélien Sarrazin, R. Tiron, N. Posseme, S. Barnola, S. Bos, C. Tallaron, G. Claveau, X. Chevalier, M. Argoud, Isabelle Servin, C. Navarro, Célia Nicolet, C. Lapeyre, C. Monget
Author Affiliations +
Abstract
Directed Self-Assembly (DSA) of Block Copolymers (BCP) is one of the most promising solutions for sub-10 nm nodes. However, some challenges need to be addressed for a complete adoption of DSA in manufacturing such as achieving DSA-friendly design, low defectivity and accurate pattern placement. In this paper, we propose to discuss the DSA integration flows using graphoepitaxy for contact-hole patterning application. DSA process dependence on guiding pattern density has been studied and solved thanks to a new approach called “DSA planarization”. The capabilities of this new approach have been evaluated in terms of defectivity, Critical Dimension (CD) control and uniformity before and after DSA etching transfer.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Pimenta Barros, A. Gharbi, Aurélien Sarrazin, R. Tiron, N. Posseme, S. Barnola, S. Bos, C. Tallaron, G. Claveau, X. Chevalier, M. Argoud, Isabelle Servin, C. Navarro, Célia Nicolet, C. Lapeyre, and C. Monget "DSA planarization approach to solve pattern density issue", Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280D (17 March 2015); https://doi.org/10.1117/12.2086810
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Cited by 9 scholarly publications.
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KEYWORDS
Directed self assembly

Polymethylmethacrylate

Etching

Critical dimension metrology

Picosecond phenomena

Semiconducting wafers

Chemistry

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