In this paper, we will demonstrate the role of the dual-frequency Capacitively Coupled Plasma (CCP) in the EUV patterning process with regards to improving LER/LWR, resist selectivity and CD tunability for holes and line patterns. One of the key knobs utilized here to improve LER and LWR, involves superimposing a negative DC voltage in RF plasma at one of the electrodes. The emission of ballistic electrons, in concert with the plasma chemistry, has shown to improve LER and LWR. Results from this study along with traditional plasma curing methods will be presented. In addition to this challenge, it is important to understand the parameters needed to influence CD tunability and improve resist selectivity. Data will be presented from a systematic study that shows the role of various plasma etch parameters that influence the key patterning metrics of CD, resist selectivity and LER/LWR. This work was performed by the Research Alliance Teams at various IBM Research and Development Facilities.
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Yannick Feurprier, Katie Lutker-Lee, Vinayak Rastogi, Hiroie Matsumoto, Yuki Chiba, Andrew Metz, Kaushik Kumar, Genevieve Beique, Andre Labonte, Cathy Labelle, Yann Mignot, Bassem Hamieh, John Arnold, "Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)," Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280F (17 March 2015);