In this paper we highlight the unique challenges associated in developing resist trim / reformation plasma etch process for SAQP integration scheme and summarize our efforts in optimizing the trim etch chemistries, process steps and plasma etch parameters for meeting the mandrel definition targets. Finally, we have shown successful patterning of 30nm pitch patterns via the resist-mandrel SAQP scheme and its implementation for Si-fin formation at 7nm node.
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Nihar Mohanty, Elliott Franke, Eric Liu, Angelique Raley, Jeffrey Smith, Richard Farrell, Mingmei Wang, Kiyohito Ito, Sanjana Das, Akiteru Ko, Kaushik Kumar, Alok Ranjan, David O'Meara, Kenjiro Nawa, Steven Scheer, Anton DeVillers, Peter Biolsi, "Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme," Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280G (17 March 2015);