17 March 2015 RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process
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Abstract
Directed self-assembly (DSA) is one of the promising candidates for next-generation lithography. We developed a novel simple sub-15 nm line-and-space (L/S) patterning process, the “coordinated line epitaxy (COOL) process,” using grapho- and chemo-hybrid epitaxy. In this study we evaluate the DSA L/S pattern transfer margin. Since defect reduction is difficult in the case of the DSA pattern transfer process, there is a need to increase the pattern transfer margin. We also describe process integration for electrical yield verification.
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Y. Kasahara, Y. Kasahara, Y. Seino, Y. Seino, K. Kobayashi, K. Kobayashi, H. Kanai, H. Kanai, H. Sato, H. Sato, H. Kubota, H. Kubota, T. Tobana, T. Tobana, S. Minegishi, S. Minegishi, K. Miyagi, K. Miyagi, N. Kihara, N. Kihara, K. Kodera, K. Kodera, M. Shiraishi, M. Shiraishi, Y. Kawamonzen, Y. Kawamonzen, S. Nomura, S. Nomura, T. Azuma, T. Azuma, } "RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process", Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280S (17 March 2015); doi: 10.1117/12.2085704; https://doi.org/10.1117/12.2085704
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