17 March 2015 A way to integrate multiple block layers for middle of line contact patterning
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It is clear today that further scaling towards smaller dimensions and pitches requires a multitude of additional process steps. Within this work we look for solutions to achieve a middle of line 193i based patterning scheme for N7 logic at a contacted poly pitch of 40-45 nm. At these pitches, trenches can still be printed by means of double patterning. However, they need to be blocked at certain positions because of a limited line end control below 90 nm pitch single print. Based on the 193i patterning abilities, the proposed SRAM (Static Random Access Memory) cell requires 5 blocking layers. Integrating 5 blocking layers is a new challenge since down to N10 one blocking layer was usually sufficient. The difficulty with multiple blocking layers is the removal of the masked parts, especially in cases of overlap. As a solution a novel patterning approach is proposed and tried out on relaxed dimensions (patent pending). The proposed solution is expected not to be sensitive to the number of blocking layers used, and tolerates their overlap. The stack is constructed to be compatible with N7 substrates such as SiGe or P:Si. Experimental results of the stack blocking performance on relaxed pitch will be presented and discussed.
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E. Kunnen, E. Kunnen, S. Demuynck, S. Demuynck, M. Brouri, M. Brouri, J. Boemmels, J. Boemmels, J. Versluijs, J. Versluijs, J. Ryckaert, J. Ryckaert, "A way to integrate multiple block layers for middle of line contact patterning", Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280W (17 March 2015); doi: 10.1117/12.2086081; https://doi.org/10.1117/12.2086081

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