18 August 1988 AlGaAs Doping Superlattices Grown By MBE
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Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947303
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
AlGaAs doping superlattices ("nipi structures") have been successfully grown in 30% AlGaAs by MBE on both (100) and misoriented substrates. Tunable photoluminescence (PL) as a function of incident laser intensity has been observed in samples with intrinsic spacer layers of 100-500 Å over a temperature range from 2 K to 120K. Luminescence shifts as large as 230 meV were observed at 2 K as the incident intensity was varied by a factor of about 500. The undoped spacer thickness was found to play an important role in the tuning of the photoluminescnece, with the dependence of the peak energy on incident intensity becoming weaker for thicker spacer layers. This decrease in tuning rate can be associated with the reduced probability for tunneling transitions with increasing spacer thickness. In addition, samples grown on misoriented substrates showed higher tuning rates for the thicker spacers than samples grown on (100) substrates. This behavior has been attributed to a higher density of traps in the (100) oriented samples.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. E. Ackley, H. Lee, N. Nouri, and C. Colvard "AlGaAs Doping Superlattices Grown By MBE", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947303; https://doi.org/10.1117/12.947303
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