AlGaAs doping superlattices ("nipi structures") have been successfully grown in 30% AlGaAs by MBE on both (100) and misoriented substrates. Tunable photoluminescence (PL) as a function of incident laser intensity has been observed in samples with intrinsic spacer layers of 100-500 Å over a temperature range from 2 K to 120K. Luminescence shifts as large as 230 meV were observed at 2 K as the incident intensity was varied by a factor of about 500. The undoped spacer thickness was found to play an important role in the tuning of the photoluminescnece, with the dependence of the peak energy on incident intensity becoming weaker for thicker spacer layers. This decrease in tuning rate can be associated with the reduced probability for tunneling transitions with increasing spacer thickness. In addition, samples grown on misoriented substrates showed higher tuning rates for the thicker spacers than samples grown on (100) substrates. This behavior has been attributed to a higher density of traps in the (100) oriented samples.