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15 August 1988 A New Model For Excess Ga Interdiffusion Process In GaAs/CdTe Heteroepitaxies
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947352
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
The presence of a flat distribution of Gallium in a heteroepitaxial CdTe layer processed on GaAs, is originating from the disturbance of the upper layers of GaAs, due to the high lattice mismatch between CdTe and GaAs. A first order model, which considers the solid-state diffusion and the segregation effects at the outer surface of CdTe as the relevant mechanisms taking place during the process, provides this fairly constant Ga distribution through CdTe, and a step increase at the surface. The magnitude of the Ga density appears as a function of the growth rate and the process temperature. A more elaborated model would account also for the stress relaxation effects in the epilayer, allowing the diffusion constant to vary along CdTe.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Esteve, M. Djafari-Rouhani, V. V. Pham, A. Bennis, and J. J. Simonne "A New Model For Excess Ga Interdiffusion Process In GaAs/CdTe Heteroepitaxies", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947352
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