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15 August 1988 Heteroepitaxial Growth Of CdTe On GaAs (100) : RHEED and XPS Study Of The Te Precursor Surface
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947339
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
MBE conditions to obtain three Te-precursor surfaces for CdTe growth on (100) GaAs substrate and their detailed XPS studies are reported : one GaAs (6x1)100-Te reconstructed surface leading to (100) growth and two reconstructed surfaces, a (6x1)111 and a so-called (I3x3), both inducing a (111) growth. These surfaces have been characterized by the relative concentrations of three Te-adsorbed states TeAS, TeGa and TeTe which are defined by their XPS lines at 573.1, 572.5 and 572.2 eV and assigned to Te bound to As, Te bound to Ga and Te-bridges respectively. Such assignments serve as elements to discuss on a model for the heteroepitaxial growth of CdTe on a GaAs (100) substrate.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Tatarenko., K. Saminadayar, J. Cibert, Y. Gobil, G. Cohen-Solal, and F. Bailly "Heteroepitaxial Growth Of CdTe On GaAs (100) : RHEED and XPS Study Of The Te Precursor Surface", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947339
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